Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors
Identifieur interne : 002219 ( Main/Repository ); précédent : 002218; suivant : 002220Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors
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Abstract
Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 x 10-3 Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source-drain structures could be obtained by inkjet-printing and field-effect transistors were constructed using poly(3-hexylthiophene) (P3HT) as organic semiconductor.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors</title><author><name sortKey="Hoffmann, Rudolf C" uniqKey="Hoffmann R">Rudolf C. Hoffmann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Chemistry, Eduard-Zintl-Institute, Inorganic Chemistry, Technische Universitat Darmstadt, Petersenstrasse. 18</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Dilfer, Stefan" uniqKey="Dilfer S">Stefan Dilfer</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Department of Printing Technology, Technische Universität Darmstadt, Magdalenenstr. 2</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Schneider, J Rg J" uniqKey="Schneider J">J Rg J. Schneider</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Chemistry, Eduard-Zintl-Institute, Inorganic Chemistry, Technische Universitat Darmstadt, Petersenstrasse. 18</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0036037</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0036037 INIST</idno><idno type="RBID">Pascal:12-0036037</idno><idno type="wicri:Area/Main/Corpus">002424</idno><idno type="wicri:Area/Main/Repository">002219</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Electrical conductivity</term><term>Field effect transistor</term><term>Indium oxide</term><term>Ink jet printing</term><term>Interfacial layer</term><term>Reducting atmosphere</term><term>Sintering</term><term>Spin-on coating</term><term>Thin film</term><term>Tin oxide</term><term>Transparency</term><term>Wetting</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transistor effet champ</term><term>Frittage</term><term>Recuit</term><term>Atmosphère réductrice</term><term>Conductivité électrique</term><term>Transparence</term><term>Couche interfaciale</term><term>Mouillage</term><term>Dépôt centrifugation</term><term>Impression à jet d'encre</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 x 10<sup>-3</sup> Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source-drain structures could be obtained by inkjet-printing and field-effect transistors were constructed using poly(3-hexylthiophene) (P3HT) as organic semiconductor.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>208</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors</s1></fA08><fA11 i1="01" i2="1"><s1>HOFFMANN (Rudolf C.)</s1></fA11><fA11 i1="02" i2="1"><s1>DILFER (Stefan)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHNEIDER (Jörg J.)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, Eduard-Zintl-Institute, Inorganic Chemistry, Technische Universitat Darmstadt, Petersenstrasse. 18</s1><s2>64287 Darmstadt</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Printing Technology, Technische Universität Darmstadt, Magdalenenstr. 2</s1><s2>64283 Darmstadt</s2><s3>DEU</s3><sZ>2 aut.</sZ></fA14><fA20><s1>2920-2925</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000507355060340</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0036037</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 x 10<sup>-3</sup> Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source-drain structures could be obtained by inkjet-printing and field-effect transistors were constructed using poly(3-hexylthiophene) (P3HT) as organic semiconductor.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Transistor effet champ</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Field effect transistor</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Transistor efecto campo</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Frittage</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Sintering</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Sinterización</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Recuit</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Annealing</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Recocido</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Atmosphère réductrice</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Reducting atmosphere</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Atmósfera reductriz</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Conductivité électrique</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Electrical conductivity</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Conductividad eléctrica</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Transparence</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Transparency</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Transparencia</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Couche interfaciale</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Interfacial layer</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Capa interfacial</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Mouillage</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Wetting</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Remojo</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépôt centrifugation</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Spin-on coating</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Impression à jet d'encre</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Ink jet printing</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Impresión por chorro de tinta</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium oxide</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Indio óxido</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>16</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Tin oxide</s0><s5>16</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>16</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Couche mince</s0><s5>17</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Thin film</s0><s5>17</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Capa fina</s0><s5>17</s5></fC03><fN21><s1>016</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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